Surface Mount Transistor (SMD Transistor) in Mobile Phone and Function - SMT Transistor is Electronic Component made of Semiconductor. Code, Identification. IRHNJ54230, datasheet for IRHNJ54230 - RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) provided by International Rectifier. IRHNJ54230 pdf documentation and IRHNJ54230 application notes.
- Surface Mount Power Mosfet
- Surface Mount Mosfet Pinout
- Testing Surface Mount Mosfets
- Desoldering Surface Mount Mosfet
- Remove Surface Mount Mosfet
IRF731 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF731
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 75 W
Предельно допустимое напряжение сток-исток |Uds|: 350 V
Максимально допустимый постоянный ток стока |Id|: 5.5 A
Surface Mount Power Mosfet
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 1 Ohm
Тип корпуса: TO220
IRF731 Datasheet (PDF)
0.1. auirf7316q.pdf Size:256K _1
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian
0.2. auirf7319q.pdf Size:365K _1
AUTOMOTIVE GRADE AUIRF7319Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 30V -30V Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.023 0.0423 6S2 D2 Dual N and P Channel MOSFET max. 0.029 0.05845G2 D2 Surface Mount P-CHANNEL MOSFETID 6.5A -4.9A Fully Avalanch
0.3. irf7313q.pdf Size:298K _1
PD - 96125IRF7313QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reel4l 150C Operating Temperature 5G2 D2RDS(on) = 0.029l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl
0.4. irf7316qpbf.pdf Size:235K _1
PD - 96126IRF7316QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-Resistance S1 D1VDSS = -30Vl Dual P- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reell 150C Operating Temperature 4 5G2 D2RDS(on) = 0.058l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appli
0.5. irf730 irf731 irf732 irf733-fi.pdf Size:486K _st
0.6. irf7317.pdf Size:156K _international_rectifier
PD - 9.1568BIRF7317PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET2 7G1 D1 Surface Mount VDSS 20V -20V3 6S2 D2 Fully Avalanche Rated4 5G2 D2P-CHANNEL MOSFETRDS(on) 0.029 0.058DescriptionTop ViewFifth Generation HEXFETs from International Rectifierut
0.7. irf7311.pdf Size:209K _international_rectifier
PD - 91435CIRF7311HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 20V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.029Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance
0.8. irf7314q.pdf Size:148K _international_rectifier
Surface Mount Mosfet Pinout
PD -93945AIRF7314QHEXFET Power MOSFETTypical ApplicationsVDSS RDS(on) max ID Anti-lock Braking Systems (ABS) -20V 0.058@VGS = -4.5V -5.2A Electronic Fuel Injection0.098@VGS = -2.7V -4.42A Air bagBenefits Advanced Process Technology Dual P-Channel MOSFET1 8S1 D1 Ultra Low On-Resistance2 7G1 D1 175C Operating Temperature3 6S2 D2
0.9. irf7313.pdf Size:105K _international_rectifier
PD - 9.1480AIRF7313PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 30V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.029T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
0.10. irf7313qpbf.pdf Size:218K _international_rectifier
PD - 96125AIRF7313QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8l Dual N- Channel MOSFETS1 D1VDSS = 30Vl Surface Mount2 7G1 D1l Available in Tape & Reel3 6S2 D2l 150C Operating Temperaturel Lead-Free 4 5G2 D2RDS(on) = 0.029DescriptionTop ViewThese HEXFET Power MOSFET's in a DualSO-8 package utilize the lastes
0.11. irf7316pbf-1.pdf Size:203K _international_rectifier
IRF7316TRPbF-1HEXFET Power MOSFETVDS -30 V1 8S1 D1RDS(on) max 0.058 2 7G1 D1(@V = -10V)GSQg (typical) 23 nC 3 6S2 D2ID 4 5-4.9 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En
0.12. irf7316s.pdf Size:103K _international_rectifier
PD - 9.1505AIRF7316PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.058T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
0.13. irf7319.pdf Size:137K _international_rectifier
PD - 9.1606AIRF7319PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE TN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET 2 7G1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2P-C H ANN EL MO SFE TRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifi
0.14. irf7316.pdf Size:103K _international_rectifier
PD - 9.1505AIRF7316PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.058T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
0.15. irf7313pbf-1.pdf Size:204K _international_rectifier
IRF7313PbF-1HEXFET Power MOSFETVDS 30 V 1 8S1 D1RDS(on) max 2 7G1 D10.029 (@V = 10V)GS3 6S2 D2Qg (typical) 22 nC45G2 D2ID 6.5 ASO-8(@T = 25C)ATop ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Enviro
0.16. irf7314.pdf Size:147K _international_rectifier
PD - 9.1436BIRF7314PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -20V2 7 Dual P-Channel MOSFETG1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
0.17. auirf7313q.pdf Size:239K _international_rectifier
PD - 97751AUTOMOTIVE GRADEAUIRF7313QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFETV(BR)DSS30V1 8S1 D1l Low On-Resistance2 7G1 D1l Dynamic dV/dT Rating RDS(on) typ.23m3 6S2 D2l 175C Operating Temperature max. 29m4 5l Fast Switching G2 D2l Lead-Free, RoHS CompliantID6.9ATop Viewl Automotive Qualified*Des
0.18. irf7316qpbf.pdf Size:215K _international_rectifier
PD - 96126AIRF7316QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P- Channel MOSFETVDSS = -30V2 7l Surface Mount G1 D1l Available in Tape & Reel3 6S2 D2l 150C Operating Temperature4 5G2 D2l Lead-FreeRDS(on) = 0.058Top ViewDescriptionThese HEXFET Power MOSFET's in a DualSO-8 package utilize the laste
Другие MOSFET... IRF723, IRF7233, IRF730, IRF730A, IRF730AL, IRF730AS, IRF730FI, IRF730S, BS170, IRF732, IRF7321D2, IRF7322D1, IRF7324D1, IRF733, IRF734, IRF7353D1, IRF737LC.